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SEMICONDUCTOR
TECHNICAL DATA
For High frequency rectification
KDR701S
SCHOTTKY BARRIER TYPE DIODE
FEATURES
Low Forward Voltage : VF max=0.55V. IR=700mA recification possible.
L
E B
L
DIM A
2
MILLIMETERS _ 2.93 + 0.20
1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7
3
D
B C D E G H J K
A
G H
1
MAXIMUM RATING (Ta=25
CHARACTERISTIC Repetitive Peak Reverse Voltage Reverse Voltage Average Forward Current Non-repetitive peak surge current Junction Temperature Storage Temperature
)
SYMBOL VRRM VR IO IFSM Tj Tstg RATING 30 30 0.7 5 125 -55 125 UNIT V V A A
C N
P P
L M N P
M 3
1. NC 2. ANODE 3. CATHODE
2 1
K
SOT-23
Marking
Lot No. Type Name
DK
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Reverse Voltage Forward Voltage Reverse Current Total Capacitance Reverse Recovery Time VR VF IR CT trr
)
TEST CONDITION IR=1mA IF=0.7A VR=30V VR=0V, f=1MHz IR=IF=100mA MIN. 30 TYP. 190 7.5 MAX. 0.55 80 UNIT V V A pF nS
SYMBOL
2003. 2. 25
Revision No : 1
J
1/2
KDR701S
I R - VR
50 REVERSE CURRENT IR (A) 30 FORWARD CURRENT I F (mA)
Ta=25 C
I F - VF
10 10 10 1 0.1 0.01 0.001
3
Ta=25 C
2
10 5 3
1 0 5 10 15 20 25 30 REVERSE VOLTAGE V R (V)
0
100
200
300
400
500
FORWARD VOLTAGE V F (V)
I R - Ta
10 REVERSE CURRENT I R (A)
4
VF - Ta
0.8 FORWARD VOLTAGE VF (V)
I F =700mA
Ta=25 C
3
0.7 0.6 0.5 0.4 0.3 0.2
10
10
2
10
1 -40 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta ( C)
-40
0
40
80
120
160
AMBIENT TEMPERATURE Ta ( C)
C T - VR
TERMINAL CAPACITANCE C T (pF) 200 180 160 140 120 100 80 60 40 20 0 0 5 10 15 20 25 30
REVERSE VOLTAGE VR (V)
2003. 2. 25
Revision No : 1
2/2

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